The effective secondary electron yield in the space-charge limited condition
Creators
- 1. Nagoya Univ. (Japan). Center for Integrated Res. in Sci. and Eng.
Description
The dependence of the effective secondary electron yield on the potential distribution and the target materials was investigated by means of electron transport simulation in the sheath with the potential distribution calculated for the different emission characteristics of Be (Z=4), C (Z=6), Mo (Z=42) and W (Z=74) as the target materials. For lower primary energy incidence the effective secondary electron yield in the space-charge limited condition (SCLC) is markedly suppressed due to the prompt return of the secondary electrons. For higher energy electrons, the yield is independent of the potential distribution in the sheath and the energy distribution of the emitted electrons is shifted to higher energy direction. This effect would increase the sheath potential resulting in the increase of both ion energy flux to the surface and sputtering yield. Because of their high reflection coefficients this result should be very important for high Z materials but not for low Z materials. (orig.)
Additional details
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 258-263
- Journal Issue
- pt.A
- Journal Page Range
- p. 927-933
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- 8. international conference on fusion reactor materials (ICFRM-8)
- Dates
- 26-31 Oct 1997
- Place
- Sendai (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 30005480
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BERYLLIUM; CARBON; ELECTRIC POTENTIAL; ELECTRON EMISSION; MOLYBDENUM; PLASMA SHEATH; SECONDARY EMISSION; SPACE CHARGE; SPUTTERING; THERMONUCLEAR REACTOR WALLS; TRAJECTORIES; TUNGSTEN
- Descriptors DEC
- ALKALINE EARTH METALS; ELEMENTS; EMISSION; METALS; NONMETALS; TRANSITION ELEMENTS
Optional Information
- Notes
- 9 refs.