Published November 1, 2011
| Version v1
Journal article
SOI-based radial-contour-mode micromechanical disk resonator
- 1. School of Information Engineering, Hebei University of Technology, Tianjin 300130 (China)
- 2. The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051 (China)
Description
This paper reports a radial-contour-mode micromechanical disk resonator for radio frequency applications. This disk resonator with a gold plated layer as the electrodes, was prepared on a silicon-on-insulator wafer, which is supported by an anchor on another silicon wafer through Au-Au thermo-compression bonding. The gap between the disk and the surrounding gold electrodes is 100 nm. The radius of the disk is 20 μm and the thickness is 4.5 μm. In results, the resonator shows a resonant frequency of 143 MHz and a quality factor of 5600 in vacuum. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/32/11/115001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 32
- Journal Issue
- 11
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43103719
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPRESSION; ELECTRODES; GOLD; INTEGRATED CIRCUITS; LAYERS; MHZ RANGE 100-1000; QUALITY FACTOR; RESONATORS; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; MATERIALS; METALS; MHZ RANGE; MICROELECTRONIC CIRCUITS; SEMIMETALS; TRANSITION ELEMENTS