Published November 1, 2011 | Version v1
Journal article

SOI-based radial-contour-mode micromechanical disk resonator

  • 1. School of Information Engineering, Hebei University of Technology, Tianjin 300130 (China)
  • 2. The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051 (China)

Description

This paper reports a radial-contour-mode micromechanical disk resonator for radio frequency applications. This disk resonator with a gold plated layer as the electrodes, was prepared on a silicon-on-insulator wafer, which is supported by an anchor on another silicon wafer through Au-Au thermo-compression bonding. The gap between the disk and the surrounding gold electrodes is 100 nm. The radius of the disk is 20 μm and the thickness is 4.5 μm. In results, the resonator shows a resonant frequency of 143 MHz and a quality factor of 5600 in vacuum. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/32/11/115001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
32
Journal Issue
11
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43103719
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPRESSION; ELECTRODES; GOLD; INTEGRATED CIRCUITS; LAYERS; MHZ RANGE 100-1000; QUALITY FACTOR; RESONATORS; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
DIMENSIONLESS NUMBERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; MATERIALS; METALS; MHZ RANGE; MICROELECTRONIC CIRCUITS; SEMIMETALS; TRANSITION ELEMENTS