Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media
Creators
- 1. Département de Génie physique, Polytechnique Montréal, C.P. 6079, Succ. Centre-ville, Montréal (QC) H3C 3A7 (Canada)
- 2. Département de Génie chimique, Polytechnique Montréal, C.P. 6079, Succ. Centre-ville, Montréal (QC) H3C 3A7 (Canada)
- 3. Département de Chimie, Université de Montréal, C. P. 6128, Succ. Centre-ville, Montréal (QC) H3C 3J7 (Canada)
- 4. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30123-970 (Brazil)
- 5. Departamento de Físico-Química, Universidade Estadual Paulista, Rua Professor Degni, 55, Araraquara, 14800-060 (Brazil)
- 6. Dipartimento di Chimica Giacomo Ciamician, Università di Bologna, Via Selmi 2, Bologna 40126 (Italy)
Description
Ion-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low voltages (ca 0.5–1 V) but they can also feature printability, flexibility and easy integration with chemo- and bio-sensing platforms. Metal oxides are transistor channel materials interesting for their processability in air, at low temperature. Among metal oxides, tungsten oxide (band gap ca 2.5–2.7 eV) stands out for its electrochromic, gas sensing and photocatalytic properties. Here we demonstrate ion-gated tungsten oxide transistors and phototransistors working in different ion gating media, such as one hydrophobic ionic liquid and an aqueous electrolyte, fabricated both on rigid and flexible substrates. Ion-gated tungsten oxide phototransistors operating in aqueous media could be used as photocatalytic sensors in portable applications. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/ab1dbbAdditional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 52
- Journal Issue
- 30
- Journal Page Range
- [9 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52052040
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE CARRIERS; ELECTRIC POTENTIAL; ELECTROCHROMISM; ELECTROLYTES; FLEXIBILITY; MOLTEN SALTS; PHOTOCATALYSIS; PHOTOTRANSISTORS; POLYMERS; SENSORS; SUBSTRATES; TUNGSTEN OXIDES
- Descriptors DEC
- CATALYSIS; CHALCOGENIDES; ELECTRO-OPTICAL EFFECTS; MECHANICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SALTS; SEMICONDUCTOR DEVICES; TENSILE PROPERTIES; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS