Published March 2018
| Version v1
Journal article
The Influence of Gain Compression Factor on Dynamical Properties of Single Level InAs/GaAs Quantum Dot Lasers
- 1. University of Guilan, Department of Physics (Iran, Islamic Republic of)
- 2. Payame Noor University (PNU), Department of Physics (Iran, Islamic Republic of)
Description
In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot lasers and computations by fourth-order Runge–Kutta method some characteristics of the output laser are considered. The change of photon number in time and current and also the output power versus current with different gain compression factors are investigated for lasing from ground state (GS). Afterwards, the response function of small signal modulation for ground state in constant current but different gain compressions is surveyed. At last, we find an optimum value for gain compression factor in lasing from GS.
Additional details
Identifiers
Publishing Information
- Journal Title
- Iranian Journal of Science and Technology. Transaction A, Science
- Journal Volume
- 42
- Journal Issue
- 1
- Journal Page Range
- p. 167-171
- ISSN
- 1028-6276
INIS
- Country of Publication
- Iran, Islamic Republic of
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50019551
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- GAIN; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; PHOTONS; QUANTUM DOTS; RESPONSE FUNCTIONS
- Descriptors DEC
- AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; BOSONS; ELEMENTARY PARTICLES; ENERGY LEVELS; FUNCTIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MASSLESS PARTICLES; NANOSTRUCTURES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2018 Shiraz University