ERD analysis and modification of TiO2 thin films with heavy ions
Creators
- 1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
- 2. Department of Engineering Sciences, Uppsala University, SE-751 21 Uppsala (Sweden)
- 3. Department of Physics and Materials Science, Uppsala University, SE-751 21 Uppsala (Sweden)
- 4. Department of Control Engineering, Czech Technical University in Prague, Technicka 2, Prague 6 (Czech Republic)
Description
Titanium dioxide (TiO2) films have been deposited on Si substrates using reactive magnetron sputtering. The resulting films, having a polycrystalline anatase phase with a dense columnar structure, were analysed by time-of-flight elastic recoil detection analysis (ToF-ERDA) using 40 MeV I9+ ions. A clear decrease in the areal atomic density (atoms/cm2) of Ti and O was observed during measurement, but the stoichiometry remained essentially constant up to a fluence of 4 x 1013 ions/cm2. To investigate this effect in more detail, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) were applied in order to characterize the films prior to and after ion irradiation with fluences in the range of 1010-1013 ions/cm2. Distinct morphological and structural changes of the polycrystalline film were observed. XRD revealed that the crystallinity of the film was gradually destroyed, and the film became amorphous at a fluence above 5 x 1012 ions/cm2. SEM and AFM measurements revealed topographical changes in the form of surface recession and smoothing compared to the pristine polycrystalline surface. The observed change in areal atomic density during ERD measurement is believed to be due to the combined effects of electronic sputtering, amorphization and ion hammering.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2010.02.051Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2010.02.051;
- PII
- S0168-583X(10)00146-1;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 268
- Journal Issue
- 11-12
- Journal Page Range
- p. 1893-1898
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 19. international conference on ion beam analysis
- Dates
- 7-11 Sep 2009
- Place
- Canbridge (United Kingdom)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42014980
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; DETECTION; HEAVY IONS; ION BEAMS; MAGNETRONS; MEV RANGE; POLYCRYSTALS; RECOILS; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; STOICHIOMETRY; SUBSTRATES; THIN FILMS; TIME-OF-FLIGHT METHOD; TITANIUM OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; ENERGY RANGE; EQUIPMENT; FILMS; IONS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SEMIMETALS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.