Published 1989 | Version v1
Journal article Metadata-only

Manganese levels in GaAs under hydrostatic pressure, in AlGaAs, and in GaAs/AlGaAs quantum wells - a comparative study

Creators

  • 1. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)

Description

Manganese-doped GaAs is investigated under hydrostatic pressure up to p=7.2 GPa. We use the low temperature photoluminescence to characterize the samples. The binding energy of the Mn acceptor increases with pressure, and the internal 4T1-6A1 transition of Mn2+ is detected for p≥2.8 GPa. A comparison is made with the position of the internal transition in AlGaAs-alloys and GaAs/AlGaAs quantum wells. (author) 11 refs., 4 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
1403-1407
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20066781
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM COMPOUNDS; ARSENIDES; BINDING ENERGY; CRYSTAL DOPING; GALLIUM COMPOUNDS; MANGANESE; PHOTOLUMINESCENCE; PRESSURE DEPENDENCE; RECOMBINATION
Descriptors DEC
ARSENIC COMPOUNDS; ELEMENTS; EMISSION; ENERGY; LUMINESCENCE; METALS; PHOTON EMISSION; TRANSITION ELEMENTS