Influence of deep centers introduced into GaAs1-xPx by ion implantation and electron irradiation on the spectral characteristics of photosensitive structures

In the design and fabrication of photosensitive structures operating in a given spectral range the authors must allow for the appearance of deep centers in semiconductor materials because these centers alter the electrophysical characteristics of the material, such as the carrier mobility and lifetime and, consequently, the spectral sensitivity. In the case of ion-implanted p+-n junctions they observed a whole range of deep centers including also those found in Schottky barriers