Published 1973
| Version v1
Report
Transient ionizing radiation effects in IMPATT diodes
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.Additional details
Publishing Information
- Imprint Pagination
- 207 p.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 5117937
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- DOSE RATES; ELECTRONS; EQUIVALENT CIRCUITS; LEAKAGE CURRENT; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DIODES; TRANSIENTS
- Descriptors DEC
- CURRENTS; ELECTRIC CURRENTS; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- University Microfilms Order No. 73-27,199.