From doping to dilution. Local chemistry and collective interactions of la in HfO
Creators
- 1. Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), Jülich, 52425 (Germany)
- 2. Fachbereich Physik, Universität Konstanz, Konstanz, 78457 (Germany)
- 3. NaMLab gGmbH, Dresden, 01187 (Germany)
- 4. Deutsches Elektronen-Synchrotron, Hamburg, 22607 (Germany)
- 5. Chair of Nanoelectronic, TU Dresden, Dresden, 01062 (Germany)
Description
Lanthanum (La) doping is considered as a promising route to overcome reliability issues of switchable ferroelectric HfO-based devices. This study links the local chemistry at the La lattice sites with local and collective electronic properties of the La:HfO matrix using hard X-ray photoelectron spectroscopy. The satellite structure of the La 3d core level, the plasmonic excitation energies, and core-level rigid binding energy shifts are investigated for La:HfO samples with a wide range of La doping, ranging from 3.5% to 33%, i.e., from the doping to dilution level. The emerging chemical phases and electronic properties are discussed as a function of La content. From the evolution of the plasmon excitation energies and rigid binding energy shifts, it is concluded that electronic charge compensation by oxygen vacancies occurs for increasing La content. (© 2022 The Authors. physica status solidi (RRL) Rapid Research Letters published by Wiley‐VCH GmbH)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssr.202100582Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. Rapid Research Letters (Online)
- Journal Volume
- 16
- Journal Issue
- 10
- Journal Page Range
- p. 1-6
- ISSN
- 1862-6270
- CODEN
- PSSRCS
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 53115637
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; BINDING ENERGY; DOPED MATERIALS; ELECTRONIC STRUCTURE; EXCITATION; FERROELECTRIC MATERIALS; HAFNIUM OXIDES; HARD X RADIATION; INTERACTIONS; LANTHANUM ADDITIONS; MULTIPLETS; PLASMONS; VACANCIES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ENERGY; ENERGY-LEVEL TRANSITIONS; HAFNIUM COMPOUNDS; IONIZING RADIATIONS; LANTHANUM ALLOYS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; POINT DEFECTS; QUASI PARTICLES; RADIATIONS; RARE EARTH ADDITIONS; RARE EARTH ALLOYS; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; X RADIATION
Optional Information
- Notes
- AID: 2100582; Special issue: (Hf,Zr)O_2-based ferroelectrics