Published October 2003
| Version v1
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Study about the heavy-ion irradiation tolerance of power MOSFET and bipolar junction transistors for space use
Creators
- 1. National Space Development Agency of Japan, Office of Research and Development, Space Component Engineering Center, Tokyo(Japan)
Description
no abstract available
Files
36116362.pdf
Files
(344.3 kB)
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Additional details
Publishing Information
- Imprint Title
- Materials science symposium 'heavy ion science in tandem energy region'
- Imprint Pagination
- 190 p.
- Journal Page Range
- p. 142-144
- Report number
- JAERI-Conf--2003-017
Conference
- Title
- Materials science symposium 'heavy ion science in tandem energy region'
- Dates
- 8-9 Jan 2003
- Place
- Tokai, Ibaraki (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 36116362
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHARGES; IRRADIATION; JUNCTION TRANSISTORS; MOSFET; NICKEL 58 BEAMS; NICKEL IONS; PHYSICAL RADIATION EFFECTS; SPACE; SPECTROSCOPY; TOLERANCE
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; FIELD EFFECT TRANSISTORS; ION BEAMS; IONS; MOS TRANSISTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 2 refs., 3 figs.; This record replaces 35060781