Published November 1993
| Version v1
Journal article
Positron annihilation in electron irradiated Cz-Si
Creators
- 1. Research Center for Advanced Science and Technology, Univ. of Tokyo (Japan)
- 2. Electronics R and D Labs., Nippon Steel Corp., Yamaguchi (Japan)
- 3. Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Inst., Gunma (Japan)
Description
Defects in electron irradiated Cz-Si were studied by the positron annihilation technique. In order to know effects of the thermal history of crystals on the introduction of defects, the specimen was quenched from 1390 C to room temperature before irradiation. A clear correlation between results obtained by the positron annihilation experiments and those by infrared spectroscopy was established. From the isochronal annealing experiment, it was found that oxygen clusters were introduced by quenching treatments. (orig.)
Additional details
Publishing Information
- Journal Title
- Hyperfine Interactions
- Journal Volume
- 79
- Journal Issue
- 1-4
- Journal Page Range
- p. 615-619.
- ISSN
- 0304-3843
- CODEN
- HYINDN
Conference
- Title
- New areas and topics in hyperfine interactions detected by nuclear radiations.
- Acronym
- 34. Yamada conference - 9. conference on hyperfine interactions
- Dates
- 17-21 Aug 1992.
- Place
- Osaka (Japan).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 25035595
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANNIHILATION; CARBON; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; ELECTRON BEAMS; IMPURITIES; MEASURING METHODS; MEV RANGE 01-10; OXYGEN; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POSITRONS; PROBES; QUENCHING; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BEAMS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; INTERACTIONS; LEPTON BEAMS; LEPTONS; LUMINESCENCE; MATTER; MEV RANGE; NONMETALS; PARTICLE BEAMS; PARTICLE INTERACTIONS; PHOTON EMISSION; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; TEMPERATURE RANGE