Published June 15, 2004 | Version v1
Journal article

Diffraction microscopy for disordered tetrahedral networks

  • 1. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  • 2. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  • 3. Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287 (United States)

Description

X-ray and electron sources are extensively used to explore disordered structures. In the case of electron, small-angle diffraction can help to testify the argument about micro-crystallites in glassy states. Diffraction intensity has two types of variance in reciprocal space: radial and azimuthal. Previously, variance as a function of k was largely used to elucidate medium-range order in amorphous semiconductors. Here azimuthal variance is introduced. This variance reveals orientational order for possible crystallites. Furthermore, the oversampling method proposed here can change our view on amorphous structure. We find that a broad peak might not truly reflect one single crystallite. In fact, two reflections can be folded to yield one broad peak. In this paper, the issues are discussed with three examples: silica, silicon, and germanium

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
95
Journal Issue
12
Journal Page Range
p. 7779-7784
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2004 American Institute of Physics.