Published 2021 | Version v1
Journal article

Wide bandgap interface layer induced stabilized perovskite/silicon tandem solar cells with stability over ten thousand hours

  • 1. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin (China)
  • 2. Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin (China)
  • 3. Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin (China)
  • 4. Institute of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, Solar Energy Conversion Center,Nankai University, Tianjin (China)

Description

The perovskite/silicon tandem solar cell (PK/c-Si TSC) is a reasonable choice that can break through the efficiency limitations of silicon cells. Here, the p-i-n perovskite solar cell is conformally grown by the evaporation–solution combination technique on fully-textured silicon heterojunction cells to realize two-terminal PK/c-Si TSCs. Due to the adverse effect of the residual PbI2 at the bottom of the perovskite bulk on device performance, a thermal-evaporated CsBr thin layer is introduced between the perovskite layer and the hole transport layer to construct a gradient perovskite absorber for optimized energy level alignment, so as to improve the open-circuit voltage and fill factor of the device. Finally, the PK/c-Si tandem cell achieves an efficiency of 27.48% and is stable in nitrogen over 10 000 h. (© 2021 Wiley-VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/aenm.202102046; Available from: https://onlinelibrary.wiley.com/loi/16146840

Additional details

Publishing Information

Journal Title
Advanced Energy Materials
Journal Volume
11
Journal Issue
48
Journal Page Range
p. 1-9
ISSN
1614-6832
CODEN
ADEMBC

Optional Information

Notes
AID: 2102046