Published December 2014 | Version v1
Journal article

In situ photoluminescence/Raman study of reversible photo-induced structural transformation of nc-Si

  • 1. V. Lashkaryov Institute of Semiconductors Physics, National Acad. Sci. of Ukraine, Kyiv (Ukraine)
  • 2. OOO 'NanoMedTekh', Kyiv (Ukraine)
  • 3. Semiconductor Physics, Technische Universität Chemnitz, Chemnitz (Germany)

Description

A cubic-to-hexagonal phase transition in Si nanocrystals (NCs) is observed in situ by recording their Raman and photoluminescence (PL) spectra simultaneously. The formation of the hexagonal structure is concluded from the appearance of characteristic Raman peaks and intense PL with spectral positions reported previously for hexagonal Si. The phase transition occurs due to heating of the NCs by the laser beam, but it is supposed to be a photo-induced effect, as it does not occur as a consequence of solely thermal heating. Both the structural transition and concomitant switching of the bright PL emission are reversible and are supposed to be of interest from the viewpoint of application. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/1/4/045905

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
1
Journal Issue
4
Journal Page Range
[10 p.]
ISSN
2053-1591

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47050468
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CUBIC LATTICES; EMISSION SPECTROSCOPY; HEATING; HEXAGONAL LATTICES; NANOSTRUCTURES; PHASE TRANSFORMATIONS; PHOTOLUMINESCENCE; RAMAN SPECTRA
Descriptors DEC
CRYSTAL LATTICES; CRYSTAL STRUCTURE; EMISSION; LUMINESCENCE; PHOTON EMISSION; SPECTRA; SPECTROSCOPY; THREE-DIMENSIONAL LATTICES