Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable α-FeSi2

Crystallization processes of amorphous Fe-Si layers have been investigated using transmission electron microscopy (TEM). Si(1 1 1) substrates were irradiated with 120 keV Fe ions at -150 deg. C to a fluence of 1.0 x 1017 cm2. An Fe-rich amorphous layer embedded in an amorphous Si was formed in the as-irradiated sample. Plan-view TEM observations revealed that a part of the amorphous Fe-Si layer crystallized to the metastable α-FeSi2 after thermal annealing at 350 deg. C for 8 h. The lattice parameter of c-axis decreased with thermal annealing. It was considered that the change in the lattice parameter originates from the decrease of the Fe occupancy at (0, 0, 1/2) and its equivalent positions in the unit cell of the metastable α-FeSi2.