Published August 1995
| Version v1
Journal article
Stabilization of gallium donor effect in electron irradiated Pb1-xSnx alloys
Description
The influence of electron irradiation and subsequent hydrostatic pressure on the galvanomagnetic properties of gallium-doped Pb1-xSnxT (x = 0.19, 0.23) has been studied. It is found that electron irradiation leads to virtyally linear alteration in charge carrier concentration due to radiation-induced donor type quasilocal levels within the conduction ban of the alloys. Under the radiation, the effect of destruction of gallium donor action gradually disappears and stabilization of the gallium donor action under pressure takes place. 16 refs.; 6 figs
Additional details
Additional titles
- Original title (Russian)
- Стабилизация донорного действия галлия в сплавах Пб
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 29
- Journal Issue
- 8
- Journal Page Range
- p. 1416-1424.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 27043830
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER DENSITY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRONS; ENERGY GAP; FERMI LEVEL; FLUX DENSITY; GALLIUM ADDITIONS; HIGH PRESSURE; LEAD TELLURIDES; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SOLID SOLUTIONS; TIN TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; DISPERSIONS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY LEVELS; ENERGY RANGE; FERMIONS; HOMOGENEOUS MIXTURES; LEAD COMPOUNDS; LEPTONS; MEV RANGE; MIXTURES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS