Controllable changing of SiC based solid solution luminescence properties

Photo- and cathode-luminescence (PL and CL) of epytaxial layers in solid solutions (SiC)1-x(AlN)x depending on the composition and temperature conditions and laser annealing is investigated. Spectra of photo- and cathode-luminescence are presented and discussed. It is shown that the PL amplification factor at laser radiation and the possibility of controlled change of tuning of maximum of luminescence radiation in the visible region can be used for modulation of luminescent properties of different regions of one and the same sample with high spatial resolution