Photodiodes based on Cdsub(x)Hgsub(1-x)Te epitaxial layers

Consideration is being given to the creation of photodiodes, based on Cdsub(x)Hgsub(1-x)Te epitaxial layers, produced by the method of liquid epitaxy, and to investigation into their electric and photoelectric properties. Epitaxial layers of n-type were grown on CdTe substrates of stoichiometric melts in closed system. The region of p-type was produced by thermal layer treatment at low pressure of Hg vapours. Results of investigations into content distribution, induced current, current-voltage characteristics and spectral characteristics of photosensitivity at room temperature are presented. The mechanism of current flowing in investigated structures and the form of spectral photosensitivity characteristics are discussed