Published August 13, 2001
| Version v1
Journal article
Observations of Al segregation around dislocations in AlGaN
Creators
Description
Transmission electron microscopy has been used to observe Al segregation around the threading dislocations in Al0.1Ga0.9N and Al0.3Ga0.7N grown by metalorganic chemical vapor deposition on 6H--SiC. Dislocation lines were found to have up to 70% more Al concentration than those regions free of dislocations in the matrix. The Al-depleted regions around the dislocations are shown to be within a few nanometers from the dislocation lines. The results also show that more Al segregate to edge dislocations than to screw ones. Copyright 2001 American Institute of Physics
Additional details
Identifiers
- DOI
- 10.1063/1.1391409;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 79
- Journal Issue
- 7
- Journal Page Range
- p. 928-930
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 32047604
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; EDGE DISLOCATIONS; GALLIUM NITRIDES; SEGREGATION; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHEMICAL COATING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; DISLOCATIONS; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; LINE DEFECTS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SURFACE COATING
Optional Information
- Notes
- Othernumber: APPLAB000079000007000928000001; 045132APL
- Funding organization
- United States (United States)