Fabrication of Cu2ZnSnS4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization
Creators
- 1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
- 2. Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
- 3. Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)
- 4. National Institute for Materials Science (NIMS), 1-1, Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Description
A supercritical ethanol (scEtOH) environment, in which sulfur is highly soluble, can lead to safety improvements and cost reductions in the sulfurization process. In this study, the feasibility of the sulfurization process in scEtOH for the preparation of Cu2ZnSnS4 (CZTS) thin films at low temperature was verified with the purpose of creating a sustainable and cost-effective process for fabricating metal-sulfide solar cells. We found that to promote atomic diffusion of sulfur and achieve sulfurization at a low temperature, the presence of defects in the amorphous oxide thin film was preferable. Moreover, in thin film fabricated by sulfurization under ethanol, the crystal size was strongly affected by ethanol density. The grain size increased up to about 1 μm as the ethanol density increased, and grain growth was remarkable, particularly in the high-density conditions of over 3.0 mol/L. Finally, we fabricated a crystalline CZTS thin film, which exhibited structural and optical properties comparable to those of a film fabricated using conventional vapor-phase sulfurization. For the prepared disordered-kesterite CZTS thin film with a Cu-poor and Zn-rich composition, photoluminescence measurements confirmed that the donor or acceptor defects engage in the emission of about 1.24 eV at 5 K, and UV–Vis measurement revealed a bandgap of 1.38 eV at room temperature. - Highlights: • An amorphous metal-oxide precursor is utilized for fabrication of Cu2ZnSnS4 film. • Sulfurization is conducted under supercritical ethanol having reducibility. • The crystal growth proceeds in a high ethanol density region. • The structural and optical properties derived from Cu2ZnSnS4 are shown.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2017.07.063Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2017.07.063;
- PII
- S0040-6090(17)30557-6;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 638
- Journal Page Range
- p. 244-250
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49080719
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL GROWTH; ETHANOL; FABRICATION; GRAIN GROWTH; GRAIN SIZE; OPTICAL PROPERTIES; OXIDES; PRECURSOR; SOLAR CELLS; SULFUR; SYNTHESIS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- ALCOHOLS; CHALCOGENIDES; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; FILMS; HYDROXY COMPOUNDS; MICROSTRUCTURE; NONMETALS; ORGANIC COMPOUNDS; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SIZE; SOLAR EQUIPMENT; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.