Published July 2000
| Version v1
Journal article
Study of multilayer structures with InAs nanoobjects in a silicon matrix
Creators
- 1. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 198103 (Russian Federation)
- 2. Max-Planck Institute of Microstructure Physics, Halle (Germany)
- 3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
Description
MBE-grown multilayer structures with InAs quantum dots embedded in a crystalline silicon matrix were studied by high resolution transmission electron microscopy. The properties of the grown structures depend critically on the substrate temperature, growth cycle sequence, and layer thicknesses. It is shown that the silicon matrix can 'accommodate' only a limited volume of InAs in the form of coherent clusters about 3 nm in size. With an increasing amount of deposited InAs, large dislocated InAs clusters are formed during Si overgrowth, accumulating excess InAs
Additional details
Identifiers
- DOI
- 10.1134/1.1188079;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 34
- Journal Issue
- 7
- Journal Page Range
- p. 810-814
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051889
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- CRYSTAL GROWTH; EXPERIMENTAL DATA; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; QUANTUM DOTS; SILICON; TEMPERATURE DEPENDENCE; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DATA; DIMENSIONS; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; INFORMATION; MICROSCOPY; NANOSTRUCTURES; NUMERICAL DATA; PNICTIDES; SEMIMETALS
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 838-843 (No. 7, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.