Published October 2014
| Version v1
Journal article
Phonons and electron-phonon coupling in graphene-h-BN heterostructures
- 1. Institute for Molecules and Materials, Radboud University Nijmegen (Netherlands)
Description
First principle calculations of the phonons of graphene-h-BN heterostructures are presented and compared to those of the constituents. It is shown that AA and AB' stacking are not only energetically less favoured than AB but also dynamically unstable. Low energy flat phonon branches of h-BN character with out of plane displacement have been identified and their coupling to electrons in graphene has been evaluated. (copyright 2014 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/andp.201400155Additional details
Identifiers
- DOI
- 10.1002/andp.201400155;
- arXiv
- arXiv:1407.6642v1;
Publishing Information
- Journal Title
- Annalen der Physik (Leipzig)
- Journal Volume
- 526
- Journal Issue
- 9-10
- Journal Page Range
- p. 381-386
- ISSN
- 0003-3804
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 46007051
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; BORON NITRIDES; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL METHOD; DISPERSION RELATIONS; ELECTRONIC STRUCTURE; ELECTRON-PHONON COUPLING; GRAPHENE; HETEROJUNCTIONS; INTERFACES; PHONONS; VALENCE
- Descriptors DEC
- BORON COMPOUNDS; CALCULATION METHODS; CARBON; COUPLING; ELEMENTS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS; VARIATIONAL METHODS