Exoelectron emission of thermal oxidated silicon

A study was made on the effect of preliminary mechanical treatment of monocrystal silicon surface with successive oxidation under different conditions on the value of thermostimulated exoemission and its relations with surface layer structure and presence of defects in the oxide film. Electron irradiation of samples results to occupation of emission-active centers, and successive temperature stimulation promotes electron liberation from these traps, formed during mechanical treatment and oxide layer growth; this fact simplifies the conditions of electron entering to vacuum. Application of exoelectron emission method enables to obtain additional data on the quality of grown oxide, as well as the presence of defects in it. Increase of defect density in the oxide results to the growth of concentration of emission-active centers and therefore to exoemission. Mechanical treatment of silicon surface, as the previous stage of oxidation process, affects sufficiently defect presence in the oxide, the value and the character of thermostimulated exoemission