Published August 2007
| Version v1
Journal article
Fabrication of SiC fibers by pyrolysis of polycarbosilane precursor fibers by γ-ray irradiation under the open air atmosphere
- 1. Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang (China)
- 2. School of Materials Science and Engineering, Southwest Univ. of Science and Technology, Mianyang (China)
Description
Polycarbosilane (PCS) precursor fibers were irradiated by γ-ray under the open air atmosphere, and then the fibers were converted to SiC ceramics fibers in inert atmosphere at high temperature. The chemical structure, microstructure and pyrolysis characteristic were studied. The results show that the oxygen in air reacts with some Si-H bonds in the PCS, bridge structures of Si-C-Si and Si-O-Si are formed in the irradiated products. The PCS fibers at the dose of 0.5 MGy are infusible in the process of sintering, at the dose of 3.0 MGy the gel content and ceramic yield are 75% and 85.17% ,respectively. The open air atmosphere can effectively reduce the curing dose. (authors)
Additional details
Publishing Information
- Journal Title
- Journal of Nuclear and Radiochemistry
- Journal Volume
- 29
- Journal Issue
- 3
- Journal Page Range
- p. 166-170
- ISSN
- 0253-9950
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 41049915
- Subject category
- S36: MATERIALS SCIENCE; S07: ISOTOPES AND RADIATION SOURCES;
- Descriptors DEI
- AIR; CERAMICS; CURING; FIBERS; GAMMA RADIATION; GELS; INERT ATMOSPHERE; IRRADIATION; MICROSTRUCTURE; OXYGEN; POLYMERS; PRECURSOR; PYROLYSIS; RADIATION DOSES; SILANES; SILICON CARBIDES; SINTERING; TEMPERATURE RANGE 0400-1000 K; YIELDS
- Descriptors DEC
- ATMOSPHERES; CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; COLLOIDS; CONTROLLED ATMOSPHERES; DECOMPOSITION; DISPERSIONS; DOSES; ELECTROMAGNETIC RADIATION; ELEMENTS; FABRICATION; FLUIDS; GASES; HYDRIDES; HYDROGEN COMPOUNDS; IONIZING RADIATIONS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; RADIATIONS; SILICON COMPOUNDS; TEMPERATURE RANGE; THERMOCHEMICAL PROCESSES
Optional Information
- Notes
- 8 figs., 8 refs.