Published 1995 | Version v1
Book

Influence of nitrogen on the optical properties of particles in a low pressure argon-silane radio-frequency discharge

  • 1. Universite d'Orleans (France)

Description

In the last few years, laboratory dusty plasmas have been actively studied in connection with in pollution control in plasma reactors for surface treatments. An increasing interest is now devoted to the positive aspect of tailored microparticulates with applications in several technological areas. Light scattering, in the Mie regime, is used to determine by in situ-diagnostics both size and optical index values. From multi angles and crossed polarization data, size and optical indices have been obtained. Size determination in the range (40-110 nm) are compared with direct measurements from ex-situ T.E.M. (Transmission Electronic Microscopy) analysis for particulates growth in an ArSiH4 RF reactor. The material modifications of the particulates due to an addition of nitrogen have been evidenced by Mie scattering data in the two situations of simultaneous or delayed nitrogen pulsed gas flows

Additional details

Publishing Information

Publisher
Stevens Institute of Technology.
Imprint Place
Hoboken, NJ (United States)
Imprint Title
XXII International conference on phenomena in ionized gases. Contributed papers 1
Imprint Pagination
172 p.
Journal Page Range
p. 111-112.

Conference

Title
22. international conference on phenomena in ionized gases.
Dates
31 Jul - 4 Aug 1995.
Place
Hoboken, NJ (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
27052456
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ARGON; HIGH-FREQUENCY DISCHARGES; LIGHT SCATTERING; NITROGEN; OPTICAL PROPERTIES; SILANES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ELECTRIC DISCHARGES; ELECTRON MICROSCOPY; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; MICROSCOPY; NONMETALS; PHYSICAL PROPERTIES; RARE GASES; SCATTERING; SILICON COMPOUNDS

Optional Information

Secondary number(s)
CONF-950749--.