Published September 20, 1981 | Version v1
Journal article Metadata-only

Plasmon instability in semiconductors with parametric cyclotron pumping

Creators

  • 1. Institute of Radiophysics and Electronics, Academy of Sciences of the Ukrainian SSR

Description

A new effect is predicted: an instability of longitudinal plasma waves at a parametric resonance in semiconductors. The growth rates are derived. The conditions under which the effect might be observed experimentally are discussed

Additional details

Publishing Information

Journal Title
JETP Lett. (Engl. Transl.)
Journal Volume
34
Journal Issue
6
Series
JETP Lett. (Engl. Transl.).
Journal Page Range
325-327
ISSN
0021-3640

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14744005
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
INSTABILITY GROWTH RATES; NONLINEAR PROBLEMS; PLASMA INSTABILITY; PLASMA WAVES; PLASMONS; RESONANCE; SEMICONDUCTOR MATERIALS; SOLID-STATE PLASMA
Descriptors DEC
INSTABILITY; MATERIALS; PLASMA; QUASI PARTICLES

Optional Information

Notes
Cover-to-cover translation of Pis'ma v Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki (USSR).