Published September 2012
| Version v1
Journal article
A versatile detector for total fluorescence and electron yield experiments
- 1. Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany)
- 2. Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany)
- 3. Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam (Germany)
Description
The combination of a non-coated silicon photodiode with electron repelling meshes makes a versatile detector for total fluorescence yield and electron yield techniques highly suitable for x-ray absorption spectroscopy. In particular, a copper mesh with a bias voltage allows to suppress or transmit the electron yield signal. The performance of this detection scheme has been characterized by near edge x-ray absorption fine structure studies of thermal oxidized silicon and sapphire. The results show that the new detector probes both electron yield and for a bias voltage exceeding the maximum photon energy the total fluorescence yield.
Additional details
Identifiers
- DOI
- 10.1063/1.4754126;
Publishing Information
- Journal Title
- Review of Scientific Instruments
- Journal Volume
- 83
- Journal Issue
- 9
- Journal Page Range
- p. 093109-093109.3
- ISSN
- 0034-6748
- CODEN
- RSINAK
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44052130
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ABSORPTION; ABSORPTION SPECTROSCOPY; FINE STRUCTURE; FLUORESCENCE; PERFORMANCE; PHOTODETECTORS; PHOTODIODES; SAPPHIRE; SEMICONDUCTOR MATERIALS; SILICON; X RADIATION; X-RAY SPECTROSCOPY
- Descriptors DEC
- CORUNDUM; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; IONIZING RADIATIONS; LUMINESCENCE; MATERIALS; MINERALS; OXIDE MINERALS; PHOTON EMISSION; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SORPTION; SPECTROSCOPY
Optional Information
- Notes
- (c) 2012 American Institute of Physics