Published October 1986
| Version v1
Journal article
Electrical properties of hydrogen bombarded silicon surfaces
- 1. Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires
Description
The effect of low energy hydrogen bombardment on the electrical properties of crystalline silicon Schottky diodes has been investigated. While a low dose irradiation produces a high number of donor-type defects which strongly modify the diodes' behaviour, a high dose irradiation leads to the formation of a metal-hydrogenated amorphous silicon-silicon structure due to silicon amorphization in a close surface region. (author)
Additional details
Publishing Information
- Journal Title
- Vacuum
- Journal Volume
- 36
- Journal Issue
- 10
- Series
- Vacuum.
- Journal Page Range
- 705-709
- ISSN
- 0042-207X
- CODEN
- VACUA
Conference
- Title
- Conference on vacuum, electron and ion technologies.
- Dates
- 7-11 Oct 1985.
- Place
- Sozopol (Bulgaria).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18053732
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTALLIZATION; DOSE RATES; ELECTRIC CONDUCTIVITY; HYDROGEN IONS; ION BEAMS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; IONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS