Published January 1983 | Version v1
Journal article Metadata-only

Moessbauer spectroscopy of implanted sources

Creators

  • 1. Laboratorium voor Algemene Natuurkunde, Materials Science Centre, Groningen, Netherlands

Description

A review is given of the field of Moessbauer spectroscopy of ion-implanted sources. After an introduction to the various aspects of the ion-implantation method, the following topics are treated: final site selection of implanted impurities; trapping of defects at implanted ions; on-line implantation; implantation in metals, semiconductors and insulators. (Auth.)

Additional details

Publishing Information

Journal Title
Hyperfine Interact.
Journal Volume
13
Journal Issue
1-3
Series
Hyperfine Interact.
Journal Page Range
65-88
ISSN
0304-3843

INIS

Country of Publication
Netherlands
Country of Input or Organization
Switzerland
INIS RN
15029347
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BIBLIOGRAPHIES; CRYSTAL DEFECTS; ION IMPLANTATION; ISOMER SHIFT; METALS; MOESSBAUER EFFECT; PHYSICAL RADIATION EFFECTS; REVIEWS; SEMICONDUCTOR MATERIALS; TRAPPING
Descriptors DEC
CRYSTAL STRUCTURE; DOCUMENT TYPES; ELEMENTS; MATERIALS; RADIATION EFFECTS

Optional Information

Notes
93 refs.