Published June 2016 | Version v1
Journal article

Metal-insulator phase diagram for the fully diagonal disordered Hubbard model at half-filling

  • 1. Institute of Physics, Vietnam Academy of Science and Technology, Hanoi (Viet Nam)

Description

The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory. (author)

Additional details

Publishing Information

Journal Title
Communications in Physics
Journal Volume
26
Journal Issue
2
Series
Published by the Vietnamese Academy of Science and Technology
Journal Page Range
p. 159-164
ISSN
0868-3166

INIS

Country of Publication
Viet Nam
Country of Input or Organization
Viet Nam
INIS RN
48103511
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BAND THEORY; DENSITY OF STATES; ELECTRON CORRELATION; HUBBARD MODEL; PHASE DIAGRAMS; SEMICONDUCTOR MATERIALS; TEMPERATURE ZERO K
Descriptors DEC
CORRELATIONS; CRYSTAL MODELS; DIAGRAMS; INFORMATION; MATERIALS; MATHEMATICAL MODELS

Optional Information

Notes
10 refs, 3 figs