Published June 2016
| Version v1
Journal article
Metal-insulator phase diagram for the fully diagonal disordered Hubbard model at half-filling
Creators
- 1. Institute of Physics, Vietnam Academy of Science and Technology, Hanoi (Viet Nam)
Description
The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory. (author)
Additional details
Publishing Information
- Journal Title
- Communications in Physics
- Journal Volume
- 26
- Journal Issue
- 2
- Series
- Published by the Vietnamese Academy of Science and Technology
- Journal Page Range
- p. 159-164
- ISSN
- 0868-3166
INIS
- Country of Publication
- Viet Nam
- Country of Input or Organization
- Viet Nam
- INIS RN
- 48103511
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; DENSITY OF STATES; ELECTRON CORRELATION; HUBBARD MODEL; PHASE DIAGRAMS; SEMICONDUCTOR MATERIALS; TEMPERATURE ZERO K
- Descriptors DEC
- CORRELATIONS; CRYSTAL MODELS; DIAGRAMS; INFORMATION; MATERIALS; MATHEMATICAL MODELS
Optional Information
- Notes
- 10 refs, 3 figs