Published September 1991
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Epataxial growth of the high-temperature superconductors YBa2Cu3O7-x on silicon single crystals with buffer layers
Description
In this work the growth of thin films of the high-temperature superconductor YBa2Cu3O7-x on Si(001) substrates has been investigated by Rutherford backscattering, channeling, X-ray diffraction, high resolution transmission electron microscopy, and electrical measurements. Epitaxial buffer layers of electrically insulating, pure and yttria-stabilized ZrO2 ([Y2O3]0.06[ZrO2]0.94 = YSZ) as well as of metallic CoSi2 were employed to largely prevent the interdiffusion and chemical reaction between the superconductor film and the substrate in spite of the high deposition temperatures of the YBa2Cu3O7-x in the range of 600 to 800deg C. (orig.)
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Additional details
Additional titles
- Original title (German)
- Epitaktisches Wachstum des Hochtemperatursupraleiters YBA
Publishing Information
- Imprint Pagination
- 83 p.
- Report number
- Juel--2524
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 23027488
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BARIUM OXIDES; COPPER OXIDES; CRYSTAL GROWTH; HIGH-TC SUPERCONDUCTORS; QUATERNARY COMPOUNDS; RUTHERFORD SCATTERING; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCO; X-RAY DIFFRACTION; YTTRIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; AMINES; BARIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; DIFFRACTION; ELASTIC SCATTERING; ELECTRON MICROSCOPY; FILMS; MICROSCOPY; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS