Published February 13, 2012 | Version v1
Journal article Metadata-only

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications

Creators

  • 1. Corporate Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582 (Japan)
  • 2. Corporate Manufacturing Engineering Center, Toshiba Corporation, Isogo-ku, Yokohama 235-0017 (Japan)
  • 3. Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, Isogo-ku, Yokohama 235-8522 (Japan)

Description

Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge4+ state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.

Additional details

Identifiers

DOI
10.1063/1.3687189;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
100
Journal Issue
7
Journal Page Range
p. 072902-072902.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43112731
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GERMANIUM; GERMANIUM IONS; HARD X RADIATION; INTERFACES; MASS SPECTRA; MASS SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRAPS; TUNNEL EFFECT; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; IONIZING RADIATIONS; IONS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; RADIATIONS; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY; X RADIATION

Optional Information

Notes
(c) 2012 American Institute of Physics