Published 2004
| Version v1
Miscellaneous
Comparison of the structural properties of PECVD SiOx Ny dielectric layer with the interface electrical properties in Si/SiOx Ny/Al capacitors
Creators
- 1. Universidade de Sao Paulo (USP), SP (Brazil)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Activity Report 2004 - LNLS - Brazilian Synchrotron Light Laboratory
- Imprint Pagination
- 109 p.
- Journal Page Range
- 2 p.
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 39116634
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Non-conventional Literature, Progress Report
- Descriptors DEI
- ALUMINIUM; CAPACITORS; DIELECTRIC MATERIALS; ELECTRICAL INSULATION; ELECTRICAL PROPERTIES; FILMS; LAYERS; PROGRESS REPORT; SILICON; SILICON NITRIDES; SILICON OXIDES; SYNCHROTRON RADIATION; SYNCHROTRON RADIATION SOURCES; X RADIATION; X-RAY SOURCES; X-RAY SPECTROSCOPY
- Descriptors DEC
- BREMSSTRAHLUNG; CHALCOGENIDES; DOCUMENT TYPES; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; IONIZING RADIATIONS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION SOURCES; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Notes
- 2 refs., 7 figs. Code: 368.pdf Imprint:Attached CD-ROM with scientific reports