Published August 1996 | Version v1
Journal article

The effect of ultrasound on the annealing of radiation defects in neutron-doped germanium

  • 1. Institute of Semiconductor Physics, Ukrainian National Academy of Sciences, 252650 Kiev (Ukraine)

Description

The temperature characteristics (in the range 77-330 K) of the electrical parameters of neutron-doped germanium samples (the tin doping level in the initial germanium NSb=4x1018 cm-3 and the integrated thermal neutron flux Φn≅1015 cm-2), subjected to isochronal annealing in the temperature range 90-210 deg. C, were investigated with the aid of the Hall effect. In addition to annealing, some samples were subjected to the action of ultrasound with frequency f=5-10 MHz and power density W=1 W/cm2. It was found that ultrasound stimulates the low-temperature stage of reverse annealing of radiation defects in neutron-doped germanium

Additional details

Publishing Information

Journal Title
Semiconductors
Journal Volume
30
Journal Issue
8
Journal Page Range
p. 765-767
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 30, 1455-1459 (August 1996); (c) 1996 American Institute of Physics.