Published June 24, 2009
| Version v1
Journal article
Spin-Hall effect and spin-Coulomb drag in doped semiconductors
Creators
- 1. Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany)
- 2. Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)
Description
In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/21/25/253202Additional details
Identifiers
- DOI
- 10.1088/0953-8984/21/25/253202;
- PII
- S0953-8984(09)44052-9;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 21
- Journal Issue
- 25
- Journal Page Range
- [16 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41032107
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CURRENTS; DOPED MATERIALS; ELECTRONS; HALL EFFECT; IMPURITIES; L-S COUPLING; SCATTERING; SEMICONDUCTOR MATERIALS; SPIN
- Descriptors DEC
- ANGULAR MOMENTUM; COUPLING; ELEMENTARY PARTICLES; FERMIONS; INTERMEDIATE COUPLING; LEPTONS; MATERIALS; PARTICLE PROPERTIES