Published June 24, 2009 | Version v1
Journal article

Spin-Hall effect and spin-Coulomb drag in doped semiconductors

  • 1. Institut fuer Theoretische Physik und Astrophysik, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany)
  • 2. Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)

Description

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/21/25/253202

Additional details

Identifiers

DOI
10.1088/0953-8984/21/25/253202;
PII
S0953-8984(09)44052-9;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
21
Journal Issue
25
Journal Page Range
[16 p.]
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41032107
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CURRENTS; DOPED MATERIALS; ELECTRONS; HALL EFFECT; IMPURITIES; L-S COUPLING; SCATTERING; SEMICONDUCTOR MATERIALS; SPIN
Descriptors DEC
ANGULAR MOMENTUM; COUPLING; ELEMENTARY PARTICLES; FERMIONS; INTERMEDIATE COUPLING; LEPTONS; MATERIALS; PARTICLE PROPERTIES