Comprehensive research of mechanism of radiation defects arising influence at single high energy heavy nuclei passing on a storage device failure and breakdown on the 'Mir' orbital complex

In the work the results of ground model experiments on high energy heavy nuclei action on a storage device failure and space examinations 'Faults' on the 'Mir' space complex board are presented. Th work was carried out within the frameworks of joint (Russia - France - Kazakhstan) Agreement. Results of study of radiation defects influence in silicon produced at passing of 235U fission fragments in silicon devices are cited. Mechanism of storage module cells faults at high energies single heavy nuclei effect and techniques of ground and space experiments is discussed