Published December 29, 2014 | Version v1
Journal article

Deterministic coupling of delta-doped nitrogen vacancy centers to a nanobeam photonic crystal cavity

  • 1. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)
  • 2. Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States)
  • 3. Department of Physics, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)
  • 4. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637 (United States)
  • 5. School of Physics and Advanced Materials, University of Technology Sydney, Ultimo, New South Wales 2007 (Australia)

Description

The negatively charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement of NVs within the cavity. Here, we report photonic crystal nanobeam cavities coupled to NVs incorporated by a delta-doping technique that allows nanometer-scale vertical positioning of the emitters. We demonstrate cavities with Q up to ∼24 000 and mode volume V ∼ 0.47(λ/n)3 as well as resonant enhancement of the ZPL of an NV ensemble with Purcell factor of ∼20. Our fabrication technique provides a first step towards deterministic NV-cavity coupling using spatial control of the emitters

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
26
Journal Page Range
p. 261101-261101.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46101293
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CONTROL; COUPLING; CRYSTALS; DATA PROCESSING; DIAMONDS; DOPED MATERIALS; EMISSION; FABRICATION; NITROGEN; PHONONS; POSITIONING; QUANTUM INFORMATION; SOLIDS; VACANCIES
Descriptors DEC
CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; INFORMATION; MATERIALS; MINERALS; NONMETALS; POINT DEFECTS; PROCESSING; QUASI PARTICLES

Optional Information

Notes
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