Exciton states in Si/SiO2 quantum dots

In this paper we report on the development of the theory of electron, hole and exciton states in silicon quantum dots imbedded into the dielectric medium. The dependence of the charge carrier penetration into the external dielectric media on the height of the potential barrier has been investigated and it has been demonstrated the high potential of such nanostructures for their applicability in optoelectronics and biomedicine. The dependence of the exciton binding energy on the barrier height has been also investigated. (authors)