Published 1973
| Version v1
Book
Charge state dependence of defects produced in electron-irradiated silicon
Creators
- 1. Gulf Radiation Technology, San Diego, Calif. (USA)
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981063
- Imprint Title
- Radiation damageand defects in semiconductors
- Imprint Pagination
- p. 26-33.
- Journal Issue
- no. 16
- Series
- Conference series.
Conference
- Title
- International conference on radiation damage and defects in semiconductors.
- Dates
- 19 Jul 1972.
- Place
- Reading, UK.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4065307
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CHARGES; ELECTRON BEAMS; FERMI LEVEL; IRRADIATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOSPHORUS; RADIATION EFFECTS; SILICON; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; LEPTON BEAMS; NONMETALS; PARTICLE BEAMS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS