Published April 20, 2009 | Version v1
Journal article

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

  • 1. Department of Materials Science, Graduate School of Engineering, Tohoku University, Aobayama 6-6-02, Sendai 980-8579 (Japan)

Description

The authors have developed a magnetic tunnel junction of Co2FeAl0.5Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2FeAl0.5Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
94
Journal Issue
16
Journal Page Range
p. 162504-162504.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2009 American Institute of Physics