Published January 1, 2005
| Version v1
Journal article
Fabrication and characterization of a metal nanocrystal memory using molecular beam epitaxy
- 1. Department of Electrical and Computer Engineering, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 157 73 Athens (Greece)
- 2. Institute of Materials Science, National Centre for Scientific Research 'Demokritos', 153 10 Ag. Paraskevi Attikis, Athens (Greece)
Description
Recently, single and few electron devices have attracted a lot of attention due to their advantages when compared to the conventional DRAM or Flash memories. There is also a great effort to replace the silicon oxide (SiO2) with materials of high dielectric constant that could allow the further downscaling of MOSFET devices. In this work, initially we study the hafnium oxide (HfO2) deposition on thin SiO2. We fabricate a HfO2 layer, with good dielectric properties and with high dielectric constant. Then, we fabricate a novel MOS memory device with platinum (Pt) nanoparticles embedded in the HfO2/SiO2 interface
Availability note (English)
Available online at http://stacks.iop.org/1742-6596/10/53/jpconf5_10_014.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 10
- Journal Issue
- 1
- Journal Page Range
- p. 53-56
- ISSN
- 1742-6596
Conference
- Title
- 2. conference on microelectronics, microsystems and nanotechnology
- Dates
- 14-17 Nov 2004
- Place
- Athens (Greece)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36108037
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEPOSITION; ELECTRONS; EQUIPMENT; FABRICATION; HAFNIUM OXIDES; INTERFACES; LAYERS; MATERIALS; MEMORY DEVICES; MOLECULAR BEAM EPITAXY; MOSFET; NANOSTRUCTURES; PARTICLES; PERMITTIVITY; PLATINUM; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; EPITAXY; FERMIONS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; LEPTONS; METALS; MOS TRANSISTORS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METALS; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS