Published June 2013
| Version v1
Journal article
Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well
Creators
- 1. National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)
Description
The energy relaxation processes of excess electrons on the surface of a semiconductor nanotube are studied. A general analytical expression for the relaxation time of the energy of nonequilibrium electrons is derived taking into account possible intersubband transitions at an arbitrary ratio of nanotube and polaron radii r0/rp. Numerical calculations for GaAs semiconductor nanotube are performed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 47
- Journal Issue
- 6
- Journal Page Range
- p. 804-807
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44081589
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; NANOTUBES; QUANTUM WELLS; RELAXATION TIME; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2013 Pleiades Publishing, Ltd.