Published November 1, 2013 | Version v1
Journal article Metadata-only

Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells

Creators

  • 1. Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
  • 2. Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of)
  • 3. Department of Physics, College of Engineering, Dongguk University, Seoul 100-715 (Korea, Republic of)

Description

The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se2 (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I–V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I–V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I–V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process. - Highlights: • CdS layers were grown by chemical bath deposition (CBD). • The CBD-CdS influenced the efficiency of Cu(In,Ga)Se2 (CIGS) solar cell. • It could be related to slight alteration in carrier recombination around CdS/CIGS. • Photo- and electroluminescence spectra detected those alterations in recombination. • The variation of results could be related to the changes in deep-level defects

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2013.05.024

Additional details

Identifiers

DOI
10.1016/j.tsf.2013.05.024;
PII
S0040-6090(13)00839-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
546
Journal Page Range
p. 289-293
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
International Union of the Materials Research Society international conference in Asia
Acronym
IUMRS-ICA 2012
Dates
26-31 Aug 2012
Place
Busan (Korea, Republic of)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46128404
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM SULFIDES; COPPER SELENIDES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPOSITION; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ENERGY LEVELS; EV RANGE; GALLIUM SELENIDES; INDIUM SELENIDES; PHOTOLUMINESCENCE; PHOTOVOLTAIC CONVERSION; RECOMBINATION; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; VISIBLE RADIATION
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CONVERSION; COPPER COMPOUNDS; DIRECT ENERGY CONVERSION; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY CONVERSION; ENERGY RANGE; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INORGANIC PHOSPHORS; LUMINESCENCE; PHOSPHORS; PHOTOELECTRIC CELLS; PHOTON EMISSION; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SOLAR EQUIPMENT; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.