Published November 2009 | Version v1
Journal article

Experimental demonstration of resonant-tunneling-diode operation beyond quasibound-state-lifetime limit

  • 1. Technische Universitaet Darmstad, 64283 Darmstadt (Germany)
  • 2. Universitaet Duisburg-Essen, 47057 Duisburg (Germany)

Description

We show, first, that the charge relaxation (response) time of resonant-tunneling diode (RTD) can be significantly shorter or longer than the resonant-state lifetime, depending on RTD operating point and RTD parameters. Coulomb interaction of electrons is responsible for the effect. Second, we demonstrate that the operating frequencies of RTDs are limited neither by resonant-state lifetime, nor by relaxation time; particularly in the RTDs with heavily doped collector, the differential conductance can stay negative at the frequencies far beyond the limits imposed by both time constants. We provide experimental evidences for both effects.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/193/1/012016

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
193
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
Acronym
EDISON 16
Dates
24-28 Aug 2009
Place
Montpellier (France)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42029869
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COULOMB FIELD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; FREQUENCY DEPENDENCE; LIFETIME; OPERATION; QUASIBOUND STATE; RELAXATION; RELAXATION TIME; TUNNEL DIODES
Descriptors DEC
ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES