Published November 2009
| Version v1
Journal article
Experimental demonstration of resonant-tunneling-diode operation beyond quasibound-state-lifetime limit
Creators
- 1. Technische Universitaet Darmstad, 64283 Darmstadt (Germany)
- 2. Universitaet Duisburg-Essen, 47057 Duisburg (Germany)
Description
We show, first, that the charge relaxation (response) time of resonant-tunneling diode (RTD) can be significantly shorter or longer than the resonant-state lifetime, depending on RTD operating point and RTD parameters. Coulomb interaction of electrons is responsible for the effect. Second, we demonstrate that the operating frequencies of RTDs are limited neither by resonant-state lifetime, nor by relaxation time; particularly in the RTDs with heavily doped collector, the differential conductance can stay negative at the frequencies far beyond the limits imposed by both time constants. We provide experimental evidences for both effects.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/193/1/012016Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 193
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 16. international conference on electron dynamics in semiconductors, optoelectronics and nanostructures
- Acronym
- EDISON 16
- Dates
- 24-28 Aug 2009
- Place
- Montpellier (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42029869
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COULOMB FIELD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; FREQUENCY DEPENDENCE; LIFETIME; OPERATION; QUASIBOUND STATE; RELAXATION; RELAXATION TIME; TUNNEL DIODES
- Descriptors DEC
- ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES