Published February 15, 2008 | Version v1
Journal article

Investigation on Transmission Properties of Terahertz Wave Through Semiconductor Aperture

  • 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

Description

The transmission properties of terahertz (THz) wave passing through semiconductor aperture have been investigated. The dispersion relationship for surface plasmon polariton (SPP) at different temperatures has been numerically calculated. The results show that the dispersion relationship increases with the increasing of frequency and the decreasing of temperature, the thickness of slab has to be taken into consideration because of the large skin depth for semiconductor slab. In addition, the propagation constant increases with the increasing of frequency and the decreasing of temperature.

Availability note (English)

Available from http://dx.doi.org/10.1088/0253-6102/49/2/49

Additional details

Identifiers

Publishing Information

Journal Title
Communications in Theoretical Physics
Journal Volume
49
Journal Issue
2
Journal Page Range
p. 485-488
ISSN
0253-6102

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42061366
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
APERTURES; DISPERSION RELATIONS; SEMICONDUCTOR MATERIALS; THICKNESS; THZ RANGE
Descriptors DEC
DIMENSIONS; FREQUENCY RANGE; MATERIALS; OPENINGS