Published February 15, 2008
| Version v1
Journal article
Investigation on Transmission Properties of Terahertz Wave Through Semiconductor Aperture
Creators
- 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Description
The transmission properties of terahertz (THz) wave passing through semiconductor aperture have been investigated. The dispersion relationship for surface plasmon polariton (SPP) at different temperatures has been numerically calculated. The results show that the dispersion relationship increases with the increasing of frequency and the decreasing of temperature, the thickness of slab has to be taken into consideration because of the large skin depth for semiconductor slab. In addition, the propagation constant increases with the increasing of frequency and the decreasing of temperature.
Availability note (English)
Available from http://dx.doi.org/10.1088/0253-6102/49/2/49Additional details
Identifiers
Publishing Information
- Journal Title
- Communications in Theoretical Physics
- Journal Volume
- 49
- Journal Issue
- 2
- Journal Page Range
- p. 485-488
- ISSN
- 0253-6102
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42061366
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- APERTURES; DISPERSION RELATIONS; SEMICONDUCTOR MATERIALS; THICKNESS; THZ RANGE
- Descriptors DEC
- DIMENSIONS; FREQUENCY RANGE; MATERIALS; OPENINGS