Growth of nanostructures based on the CdxHg1-xTe with ellipsometric control

The nanostructures based on CdxHg1-xTe were grown by molecular beam epitaxy using precise control of thickness and compositions of layers in situ with the help of ultrafast ellipsometer. Potential barriers and wells during the growth were reached by the change of tellurium flux. In the case of the damping oscillations of ellipsometric parameters were observed. The comparison of experimental data with calculated values shows that it is practical to control the composition in a potential barrier or in the well, its thickness and interface sharpness. It is shown that the grown potential barriers of various depth and potential wells with a thickness ranging of two to several tens nanometers have sharp boundaries which spreading does not exceed one monolayer