Published June 15, 2015
| Version v1
Journal article
Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties
Creators
- 1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
- 2. National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
- 4. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of)
Description
In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal–oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I–V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures
Availability note (English)
Available from http://dx.doi.org/10.1016/j.actamat.2015.03.041Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2015.03.041;
- PII
- S1359-6454(15)00217-7;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 92
- Journal Page Range
- p. 1-7
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47022510
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALLOYS; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; EPITAXY; ERBIUM; LAYERS; MICROSTRUCTURE; MOLYBDENUM ADDITIONS; MOSFET; OXIDATION; RARE EARTHS; SCHOTTKY BARRIER DIODES; SEGREGATION; SEMICONDUCTOR MATERIALS; SILICON; STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YTTERBIUM
- Descriptors DEC
- ALLOYS; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; FIELD EFFECT TRANSISTORS; MATERIALS; METALS; MICROSCOPY; MOLYBDENUM ALLOYS; MOS TRANSISTORS; PHYSICAL PROPERTIES; RARE EARTHS; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; TRANSISTORS; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.