Trivalent aluminum ion conducting characteristics in Al2(WO4)3 single crystals
Creators
- 1. Osaka Univ., Suita, Osaka (Japan)
- 2. Brockhouse Inst. for Materials Research, Hamilton, Ontario (Canada)
Description
Single crystals of the trivalent Al3+ ion conductor Al2(WO4)3 were grown by the Czochralski (CZ) method. The ionic conductivity in the a-, b-, and c-axis directions was determined and Al3+ ion conduction in the direction of the b-axis was concluded to be the most suitable pathway for ion migration in the tungstate grains. The ionic conductivities in the a- and c-axis directions were 0.3 and 10-2 times lower than the conductivity in the b-axis. Consistent with this observation, the lowest activation energy (Ea) for Al3+ ion migration was obtained for the b-axis direction. The Ea of the conductivity in the direction of the c-axis was almost comparable to that of the polycrystalline samples and the Ea of the Al3+ ionic conduction in the grains of this material was explicitly verified to be controlled by the Al3+ ionic migration in the c-axis direction. The Al3+ ion conductivity of the polycrystalline sample was higher in the higher temperature region, indicating that the conductivity in the grain boundaries enhances the total Al3+ ion conductivity to a considerable extent. From the oxygen pressure dependencies of the electrical conductivity and the polarization behavior, the single crystals were demonstrated to be pure Al3+ ionic conductors showing an anisotropic ion conducting behavior
Additional details
Publishing Information
- Journal Title
- Chemistry of Materials
- Journal Volume
- 10
- Journal Issue
- 9
- Journal Page Range
- p. 2542-2545
- ISSN
- 0897-4756
- CODEN
- CMATEX
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30010515
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ALUMINIUM OXIDES; ANISOTROPY; GRAIN BOUNDARIES; IONIC CONDUCTIVITY; MONOCRYSTALS; TUNGSTEN OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS