Edge-over MOSFET with poly-Si thin film channel for achieving thermodynamic limit of subthreshold swing in nanometer scale

We propose a new device structure of poly-silicon thin film channel metal-oxide-semiconductor field effect transistor where the transistor channel is enlarged vertically with an insulating pillar. Technology Computer Aided Design modeling was conducted to investigate the operational performance of the proposed device. For ultra-short lateral channel length of ∼9.5 nm between source and drain, a remarkably low subthreshold swing of ∼62.6 mV/dec was obtained at 0.5 V drain bias. The drain induced barrier lowering was also found to be quite small, ∼13.7 mV V⁻¹. Our device structure makes it possible to achieve the thermodynamic limit of subthreshold swing for the lateral device size of several nanometers. (paper)