Published June 2007
| Version v1
Journal article
Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si
- 1. Department of Physics, Chinese University of Hong Kong, Hong Kong (China) and Materials Science and Technology Research Center, Chinese University of Hong Kong, Hong Kong (China) and Faculty of Physics and Electronic Technology, Hubei Province Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices, Hubei University, Wuhan 430062 (China)
- 2. Materials Science and Technology Research Center, ChineseUniversity of Hong Kong, Hong Kong (China)
- 3. Department of Physics, ChineseUniversity of Hong Kong, Hong Kong (China)
- 4. Department of Electronics Engineering, Chinese University of Hong Kong, Hong Kong (China)
- 5. Materials Science and Technology Research Center, Chinese University of Hong Kong, Hong Kong (China)
- 6. School of Electronic Engineering, Computer and Mathematic, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
- 7. Department of Physics, Chinese University of Hong Kong, Hong Kong (China)
Description
FeSi2 precipitates with various structural properties embedded within silicon matrix were formed by iron ion implantation using a metal vapor vacuum arc ion source followed by thermal annealing at various conditions. The microstructure and phase properties of the implanted samples were studied by transmission electron microscopy. The orientation relationships and thus the interfacial coherence between the FeSi2 precipitates and the Si matrix were observed to change with the annealing conditions. A good correlation is identified in-between the structural properties and the photoluminescence properties of these samples
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2007.02.102;
- PII
- S0168-583X(07)00525-3;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 259
- Journal Issue
- 2
- Journal Page Range
- p. 871-874
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39022664
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CORRELATIONS; ION BEAMS; ION IMPLANTATION; ION SOURCES; IRON IONS; IRON SILICIDES; METALS; MICROSTRUCTURE; ORIENTATION; PHOTOLUMINESCENCE; PRECIPITATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY; VAPORS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; FLUIDS; GASES; HEAT TREATMENTS; IONS; IRON COMPOUNDS; LUMINESCENCE; MICROSCOPY; PHOTON EMISSION; SEMIMETALS; SEPARATION PROCESSES; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.